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IRFP250N - MOSFET N Channel Transistor

DESCRIPTION:

The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parallelling and temperature stabilty of the electrical parameters.
  • Isolated Central Mounting Hole
  • Repetitive Avalanche Ratings
  • Dynamic dv/dt Rating
  • Simple Drive Requirements
  • Ease of Paralleling
 

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