DESCRIPTION:
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATION:
Linear amplification and switching.
SPECIFICATION:
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 30V
Power Dissipation Pd: 500mW
DC Collector Curre..
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Features:
Also available in white package by specifying -M suffix, eg. 4N25-M
UL recognized (File # E90700)
VDE recognized (File # 947..
BC548 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the..
BD140 PNP Si Transistor
1.5 A, 80 V PNP Bipolar Power TransistorThe BD140 is a PNP Epitaxial Planar Transistor that is mounted in the SOT-32 plastic packageThey are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN comp..
DESCRIPTION:
The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.
APPLICATION:
Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies). L..
DESCRIPTION:
The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair ..
DESCRIPTION:
The IRLB87 MOSFET series recently release by International Rectifier are industrial-qualified 30V TO-220 HEXFET® power MOSFETs with extremely low gate charge (Qg) for applications including Uninterruptable Power Supply (UPS) inverters, low voltage power tools, ORing applications and ..
DESCRIPTION:
The QRD1114 reflective sensor consists of an infrared (IR) emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing.
The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD..