SPECIFICATIONS:
Drain-Source Volt (Vds): 100V
Drain-Gate Volt (Vdg): 100V
Gate-Source Volt (Vgs): 20V
Drain Current (Id): 30A
Power Dissipation (Ptot): 150W
Type: N-Channel
APPLICATION:
High Current, High Speed Switching
Solenoid and Relay Drivers
DC-DC & DC-AC C..
DESCRIPTION:
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known..