DESCRIPTION:
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATION:
Linear amplification and switching.
SPECIFICATION:
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 30V
Power Dissipation Pd: 500mW
DC Collector Curre..
DESCRIPTION:
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor application..
DESCRIPTION:
Drain-Source Volt (Vds): 60V
Drain-Gate Volt (Vdg): 60V
Gate-Source Volt (Vgs): ±20V
Drain Current (Id): 0.2A
Power Dissipation (Ptot): 350mW
Type: N-Channel
..
DESCRIPTION:
Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.
High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation A
..
DESCRIPTION:
Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.
SPECIFICATION:
High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation Area − 1.0 A/100 V @..
DESCRIPTION:
Maximum collector power dissipation (Pc): 300mW
Maximum collector-base voltage (Ucb): 50V
Maximum collector-emitter voltage (Uce): 45V
Maximum emitter-base voltage (Ueb): 5V
Maximum collector current (Ic max): 100mA
Maximum junction temperature (Tj): 125°C
Transition f..
DESCRIPTION:
BC547 is a NPN general-purpose Bipolar NPN transistors in TO-92 package, designed for use in driver stage of audio amplifier.when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin Bi-Polar NPN Transistor.DC Current Gai..
BC548 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the..
DESCRIPTION:
The BC557 is general purpose silicon, PNP, bipolar junction transistor.
The BC557 is a versatile PNP bipolar junction transistor widely used in electronic circuits.With its low noise and high current gain. it's ideal for applications requiring amplification, switching, or voltage ..
DESCRIPTION:semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the ..
DESCRIPTION:The BC639 is an NPN Transistor in a TO-92 package which has a VCE of 100V and a continuous collector current of 1A. With this characteristic and 1W total power dissipation, this transistor can be used in moderately high voltage switching applications.
Collector-Emitter Volt (Vceo):..
BD140 PNP Si Transistor
1.5 A, 80 V PNP Bipolar Power TransistorThe BD140 is a PNP Epitaxial Planar Transistor that is mounted in the SOT-32 plastic packageThey are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN comp..