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BS170 S170 N-Channel Switching FET

DESCRIPTION:

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching

Features

  • Drain-Source Volt (Vds): 60V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current(1) 0.5 Adc
  • Total Device Dissipation @ TA = 25°C PD 350 mW
  • Operating and Storage Junction
  • Temperature Range TJ, Tstg –55 to +150 °C
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel


 

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